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Titolo:
EFFECT OF GROWTH-CONDITIONS ON FORMATION OF TIO2-II THIN-FILMS IN ATOMIC LAYER DEPOSITION PROCESS
Autore:
AARIK J; AIDLA A; SAMMELSELG V; UUSTARE T;
Indirizzi:
TARTU STATE UNIV,INST MAT SCI,18 ULIKOOLI ST EE-2400 TARTU ESTONIA ESTONIAN ACAD SCI,INST PHYS EE-2400 TARTU ESTONIA
Titolo Testata:
Journal of crystal growth
fascicolo: 3, volume: 181, anno: 1997,
pagine: 259 - 264
SICI:
0022-0248(1997)181:3<259:EOGOFO>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
J. Aarik et al., "EFFECT OF GROWTH-CONDITIONS ON FORMATION OF TIO2-II THIN-FILMS IN ATOMIC LAYER DEPOSITION PROCESS", Journal of crystal growth, 181(3), 1997, pp. 259-264

Abstract

The role of precursor doses and purge times on the atomic layer deposition (ALD) of high-density alpha-PbO2-type TiO2 polymorph (TiO2-II) is studied. It has been shown that the conditions closest to ideal ALD result in the most favourable growth of TiO2-II films from TiCl4, and H2O. Complete coverage of solid surface with chloride during TiCl4 pulse, is a crucial precondition for obtaining TiO2-II structure. The maximum thickness of pure TiO2-II films is limited and depends on the growth conditions. The gas-phase reactions and the surface reactions via OH-groups which reduce the Cl/Ti ratio in the surface intermediate layer formed during TiCl4, pulse, cause a decrease in this value.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/11/20 alle ore 12:58:28