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Titolo:
LARGE-AREA DEPOSITION OF ITO FILMS BY CLUSTER TYPE SPUTTERING SYSTEM
Autore:
ISHIBASHI K; WATABE K; SAKURAI T; OKADA O; HOSOKAWA N;
Indirizzi:
ANELVA CORP,R&D LAB,5-8-1 YOTSUYA FUCHU TOKYO 183 JAPAN
Titolo Testata:
Journal of non-crystalline solids
, volume: 218, anno: 1997,
pagine: 354 - 359
SICI:
0022-3093(1997)218:<354:LDOIFB>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
OXIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
K. Ishibashi et al., "LARGE-AREA DEPOSITION OF ITO FILMS BY CLUSTER TYPE SPUTTERING SYSTEM", Journal of non-crystalline solids, 218, 1997, pp. 354-359

Abstract

The preparation of large area ITO films for transparent electrodes ofliquid crystal display (LCD) devices by a cluster type sputtering system (Anelva C-3500) was carried out. Effects of sputtering pressure and introduced oxygen gas flow rate at a low substrate temperature of 10degrees C on crystal structure, electrical property and etching properties were measured, Amorphous films could be obtained at a sputteringpressure higher than 2.6 Pa and an introduced oxygen gas flow rate lower than 0.8 sccm. During the measurement of etching properties of these films, an etching rate > 80 nm/s and a uniformity of about +/- 20% were obtained. The sheet resistance could not be reduced to a practical level for LCD devices even after annealing. To obtain a uniform and high etching rare and a low sheet resistance at a practical level, theparameters should be optimized, Although the film was not completely amorphous, an average value of 27 nm/s and a uniformity of +/- 23.5% for the etching rate was obtained within an area of 370 x 470 mm on a 400 x 500 mm substrate and an average sheet resistance of about 30 Omega/square was also obtained after annealing. (C) 1997 Published by Elsevier Science B.V.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/07/20 alle ore 05:49:47