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Titolo:
DETERMINATION OF 2-PHOTON-GENERATED FREE-CARRIER LIFETIME IN SEMICONDUCTORS BY A SINGLE-BEAM Z-SCAN TECHNIQUE
Autore:
ZHANG X; FANG H; TANG S; JI W;
Indirizzi:
NATL UNIV SINGAPORE,DEPT PHYS,LOWER KENT RIDGE RD SINGAPORE 119260 SINGAPORE NATL UNIV SINGAPORE,DEPT PHYS SINGAPORE 119260 SINGAPORE
Titolo Testata:
Applied physics. B, Lasers and optics
fascicolo: 4-5, volume: 65, anno: 1997,
pagine: 549 - 554
SICI:
0946-2171(1997)65:4-5<549:DO2FLI>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
RESOLVED Z-SCAN; OPTICAL NONLINEARITIES; TIME; ZNSE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
X. Zhang et al., "DETERMINATION OF 2-PHOTON-GENERATED FREE-CARRIER LIFETIME IN SEMICONDUCTORS BY A SINGLE-BEAM Z-SCAN TECHNIQUE", Applied physics. B, Lasers and optics, 65(4-5), 1997, pp. 549-554

Abstract

We report a method for determining photo-excited free-carrier recombination time in semiconductors. This method is based on the simulation of single-beam Z scans with laser pulses of two different widths: 25 ps and 7 ns (FWHM). By conducting Z scans with laser pulses of 25-ps duration, the two-photon absorption coefficient, the nonlinear refractive index, and the refractive index change induced by an electron-hole pair excited by two-photon absorption are first determined unambiguously. While using these nonlinear parameters in Z scans obtained with 7-ns laser pulses, the lifetimes of two-photon-excited free carriers are accurately extracted to be 7.0 +/- 1.0, 2.8 +/- 0.3, and 18 +/- 4 ns in semiconductors ZnSe, ZnO, and ZnS, respectively.

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Documento generato il 05/04/20 alle ore 18:58:09