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Titolo:
OPTICAL DETERMINATION OF VALENCE-BAND CONFIGURATION AND CARRIER EFFECTIVE-MASS IN IN0.08GA0.92AS GAAS QUANTUM-WELLS/
Autore:
LEE KS; KWON OK; JEONG BS; HAN WS; LEE B; LEE EH; KIM Y; LEE CD; NOH SK;
Indirizzi:
ELECT & TELECOMMUN RES INST TAEJON 305600 SOUTH KOREA NATL HIGH MAGNET FIELD LAB LOS ALAMOS NM 87545 KOREA RES INST STAND & SCI TAEJON 305600 SOUTH KOREA
Titolo Testata:
Journal of the Korean Physical Society
fascicolo: 4, volume: 31, anno: 1997,
pagine: 693 - 698
SICI:
0374-4884(1997)31:4<693:ODOVCA>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
MAGNETOEXCITON GROUND-STATE; PHOTOREFLECTANCE; ENERGY; FIELD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
K.S. Lee et al., "OPTICAL DETERMINATION OF VALENCE-BAND CONFIGURATION AND CARRIER EFFECTIVE-MASS IN IN0.08GA0.92AS GAAS QUANTUM-WELLS/", Journal of the Korean Physical Society, 31(4), 1997, pp. 693-698

Abstract

We have determined the valence-band structure and heavy-hole effective mass of In-0.08 Ga-0.92 As/GaAs quantum wells by using photoreflectance and magnetophotoluminescence spectroscopy. A comparison between the experimental results for the interband transitions and the theoretical calculations indicated that the heavy-hole band offset was 35+/-5% and that the configuration of the quantum well for Light-hole states was type II. From the diamagnetic shifts of the magnetoexciton ground state, we found that the heavy-hole in-plane mass was 0.19 m(0).

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Documento generato il 01/12/20 alle ore 13:37:57