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Titolo:
LIGAND-EXCHANGE REACTIONS IN ORGANOMETALLIC VAPOR-PHASE EPITAXY
Autore:
KAPPERS MJ; WARDDRIP ML; WILKERSON KJ; HICKS RF;
Indirizzi:
UNIV CALIF LOS ANGELES,DEPT CHEM ENGN,5531 BOELTER HALL LOS ANGELES CA 90095
Titolo Testata:
Journal of electronic materials
fascicolo: 10, volume: 26, anno: 1997,
pagine: 1169 - 1173
SICI:
0361-5235(1997)26:10<1169:LRIOVE>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
TRIMETHYLAMINE ALANE; GROWTH; DEPOSITION;
Keywords:
ALKYL LIGAND EXCHANGE REACTIONS; CDZNTE; INFRARED SPECTROSCOPY (IR); INGAAS; ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE); X-RAY DIFFRACTION (XRD);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
M.J. Kappers et al., "LIGAND-EXCHANGE REACTIONS IN ORGANOMETALLIC VAPOR-PHASE EPITAXY", Journal of electronic materials, 26(10), 1997, pp. 1169-1173

Abstract

The organometallic vapor phase epitaxy (OMVPE) of CdZnTe and InGaAs alloys has been studied using on-line infrared spectroscopy and ex-situx-ray crystallography. During II-VI OMVPE, ligand exchange reactions between dimethylcadmium and diethylzinc produce more reactive ethylcadmium species, and less reactive methylzinc species. During III-V OMVPE, reactions between trimethylindium and triethylgallium produce more reactive ethylindium compounds and less reactive methylgallium compounds. The large difference in reactivities of these sources makes it difficult to control the group II and III composition during CdZnTe and InGaAs OMVPE.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/09/20 alle ore 06:13:29