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Titolo:
STUDYING THE ENVIRONMENTS OF ION-IMPLANTED ARSENIC DEFECTS IN AMORPHOUS AND RECRYSTALLIZED SILICON WITH IMPURITY EXAFS
Autore:
GREAVES GN; DENT AJ; DERST G; KALBITZER S; MULLER G;
Indirizzi:
UNIV WALES,DEPT PHYS ABERYSTWYTH SY23 3BZ CEREDIGION WALES CLRC,DARESBURY LAB WARRINGTON WA4 4AD CHESHIRE ENGLAND MAX PLANCK INST KERNPHYS D-69029 HEIDELBERG GERMANY DAIMLER BENZ AG,FORSCH & TECH D-81663 MUNICH GERMANY
Titolo Testata:
Berichte der Bunsengesellschaft fur Physikalische Chemie
fascicolo: 9, volume: 101, anno: 1997,
pagine: 1258 - 1264
SICI:
0005-9021(1997)101:9<1258:STEOIA>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Keywords:
PHASE TRANSITIONS; SEMICONDUCTORS; SPECTROSCOPY, X-RAY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
22
Recensione:
Indirizzi per estratti:
Citazione:
G.N. Greaves et al., "STUDYING THE ENVIRONMENTS OF ION-IMPLANTED ARSENIC DEFECTS IN AMORPHOUS AND RECRYSTALLIZED SILICON WITH IMPURITY EXAFS", Berichte der Bunsengesellschaft fur Physikalische Chemie, 101(9), 1997, pp. 1258-1264

Abstract

With recent developments in solid stare detectors combined with X-rays at glancing angles of incidence, Extended X-ray Absorption Fine Structure (EXAFS) experiments on arsenic ion-implanted into amorphous silicon surfaces have been obtained at dilutions down to 0.01 at%. Structural relaxation processes in both hydrogen-containing and hydrogen-freematerial have been examined, including the effects of single doping and of counterdoping. In addition the different careers of solid phase epitaxy and amorphisation have been followed from the standpoint of the arsenic environment. EXAFS has been used to establish the degree of crystallinity in the vicinity of arsenic impurities at each stage so that this can be compared with the overall extent of crystalline order in the ion-implanted silicon.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 11:21:45