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Titolo:
ELECTROCHEMICAL MEASUREMENTS DURING THE CHEMICAL-MECHANICAL POLISHINGOF TUNGSTEN THIN-FILMS
Autore:
KNEER EA; RAGHUNATH C; MATHEW V; RAGHAVAN S; JEON JS;
Indirizzi:
UNIV ARIZONA,DEPT MAT SCI & ENGN TUCSON AZ 85721 ADV MICRO DEVICES INC SUNNYVALE CA 94088
Titolo Testata:
Journal of the Electrochemical Society
fascicolo: 9, volume: 144, anno: 1997,
pagine: 3041 - 3049
SICI:
0013-4651(1997)144:9<3041:EMDTCP>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
E.A. Kneer et al., "ELECTROCHEMICAL MEASUREMENTS DURING THE CHEMICAL-MECHANICAL POLISHINGOF TUNGSTEN THIN-FILMS", Journal of the Electrochemical Society, 144(9), 1997, pp. 3041-3049

Abstract

A polishing tool and a potentiostat were used to simultaneously polish and measure the direct current (de) open-circuit potential and anodic polarization behavior of chemical vapor deposited tungsten films in the presence of various oxidants. Of the different oxidants tested at pH 1.5 or pH 4.4, (NH4)(6)Mo7O24 formed the most protective passive layer on tungsten. Even in the presence of the most aggressive oxidant, Fe(NO3)(3), the dissolution rates of chemical vapor deposited tungstenwere approximately 3 nm/min during abrasion, which is a very small fraction of typical removal rates reported for chemical mechanical polishing of tungsten. This indicates that electrochemical oxidation followed by abrasive removal of the oxidation product and dissolution may not be the primary mechanism for tungsten removal. Atomic force microscopy scans of polished tungsten films indicate that corrosion assisted fracture may be an important removal mechanism for tungsten during chemical mechanical polishing.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/07/20 alle ore 03:27:58