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1. Tomellini, M; Fanfoni, M
   Rate equation approach to film growth
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2. Ghaisas, SV
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3. Oberbeck, L; Schmidt, J; Wagner, TA; Bergmann, RB
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4. Costantini, G; Rusponi, S; de Mongeot, FB; Boragno, C; Valbusa, U
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5. Schmid, M; Lundgren, E; Leonardelli, G; Hammerschmid, A; Stanka, B; Varga, P
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6. Takami, T; Mine, T; Kusunoki, I; Nishitani-Gamo, M; Ando, T
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7. Uzan-Saguy, C; Reznik, A; Cytermann, C; Brener, R; Kalish, R; Bustarret, E; Bernard, M; Deneuville, A; Gheeraert, E; Chevallier, J
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8. Grzegory, I
   High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN - based structures
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9. Palasantzas, G; De Hosson, JTM
   Influence of quasi-layer-by-layer roughness on proximity effects in thin film superconducting/normal-metal junctions
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10. Hsu, H; Wang, YL
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11. Fan, W; Markworth, PR; Marks, TJ; Chang, RPH
    Growth of atomically flat homoepitaxial magnesium oxide thin films by metal-organic chemical vapor deposition
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12. Kahng, SJ; Choi, BY; Kuk, Y
    Sputter-erosion dynamics of Ni(110) surface
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13. Pimpinelli, A; Videcoq, A; Vladimirova, M
    Kinetic surface patterning in two-particle models of epitaxial growth
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14. Videcoq, A; Vladimirova, M; Pimpinelli, A
    Kinetic surface structuring during homoepitaxy of GaAs(110): a model study
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15. Nishio, M; Hayashida, K; Harada, H; Mitsuishi, Y; Guo, QX; Ogawa, H
    Photo luminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    
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16. Kim, HM; Oh, JE; Kang, TW
    Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method
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17. Popescu, MN; Amar, JG; Family, F
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18. Chatraphorn, PP; Toroczkai, Z; Das Sarma, S
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19. Maroutian, T; Douillard, L; Ernst, HJ
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20. Botez, CE; Elliott, WC; Miceli, PF; Stephens, PW
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21. Myslivecek, J; Sobotik, P; Ost'adal, I; Jarolimek, T; Smilauer, P
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22. Beben, J; Hwang, IS; Chang, TC; Tsong, TT
    Model for surfactant-mediated growth of Ge on Pb-covered Si(111) surfaces - art. no. 033304
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23. Heyn, C
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24. Itoh, M
    Atomic-scale homoepitaxial growth simulations of reconstructed III-V surfaces
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25. Gierer, M; Iglesias, A; Moritz, W
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26. Esser, M; Wormeester, H; Poelsema, B
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27. Gerlach, R; Maroutian, T; Douillard, L; Martinotti, D; Ernst, HJ
    A novel method to determine the Ehrlich-Schwoebel barrier
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28. Layson, AR; Thiel, PA
    Testing realistic environments for metal film growth and aging: chemical insights into the effect of oxygen on Ag/Ag(100)
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29. van Dijken, S; de Bruin, D; Poelsema, B
    Kinetic physical etching for versatile novel design of well ordered self-affine nanogrooves
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30. Michely, T; Kalff, M; Comsa, G; Strobel, M; Heinig, KH
    Step edge diffusion and step atom detachment in surface evolution: Ion-erosion of Pt(111)
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31. Ballestad, A; Ruck, BJ; Adamcyk, M; Pinnington, T; Tiedje, T
    Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films
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32. Kirilyuk, V; Zauner, ARA; Christianen, PCM; Weyher, JL; Hageman, PR; Larsen, PK
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33. Williams, RS; Ashwin, MJ; Neave, JH; Jones, TS
    Optimising the growth of pyramidal GaAs microstructures on pre-patterned GaAs(001) substrates
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34. Wenisch, H; Kirchner, V; Hong, SK; Chen, YF; Ko, HJ; Yao, T
    Evaluation of ZnO substrates for homoepitaxy
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35. McGinnis, AJ; Thomson, D; Davis, RF; Chen, E; Michel, A; Lamb, HH
    In situ cleaning of GaN/6H-SiC substrates in NH3
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36. Pritchard, RE; Oulton, RF; Stavrinou, PN; Parry, G; Williams, RS; Ashwin, MJ; Neave, JH; Jones, TS
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37. Palasantzas, G; De Hosson, JTM
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38. Usagawa, T; Yao, X; Koyama, S; Tanabe, K; Izumi, T; Shiohara, Y
    (110) NdBa2CU3O7-delta and YBa2CU3O7-delta films grown on (110) NdBa2Cu3O7-delta single crystal substrates by 90 degrees off-axis RF magnetron sputtering methods
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39. Ogata, K; Kawanishi, T; Maejima, K; Sakurai, K; Fujita, S; Fujita, S
    Improvements of ZnO qualities grown by metal-organic vapor phase epitaxy using a molecular beam epitaxy grown ZnO layer as a substrate
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40. Apostolopoulos, G; Boukos, N; Travlos, A; Herfort, J; Ploog, KH
    Extending the epitaxial thickness limit in low-substrate-temperature-grownGaAs
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41. Fanfoni, M; Tomellini, M; Volpe, M
    How the nonrandom distribution of nuclei affects the island density in thin-film growth
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42. Dubon, OD; Evans, PG; Chervinsky, JF; Aziz, MJ; Spaepen, F; Golovchenko, JA; Chisholm, MF; Muller, DA
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43. Sakai, S
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44. Thiel, PA; Evans, JW
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45. Haug, K; Jenkins, T
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46. Krug, J
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47. Schinzer, S; Kohler, S; Reents, G
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48. Takami, T; Suzuki, K; Mine, T; Kusunoki, I; Nishitani-Gamo, M; Ando, T
    RHEED and STM study of a homoepitaxial diamond (001) thin film produced bymicrowave plasma CVD
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49. Di Cioccio, L; Neyret, E
    Homoepitaxy of silicon carbide
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50. Hwang, ES; Lee, J
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51. Cadilhe, AM; Stoldt, CR; Jenks, CJ; Thiel, PA; Evans, JW
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52. Bell, GR; Krzyzewski, TJ; Joyce, PB; Jones, TS
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53. Ratsch, C; Gyure, MF; Chen, S; Kang, M; Vvedensky, DD
    Fluctuations and scaling in aggregation phenomena
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54. Moldovan, D; Golubovic, L
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55. Mazzone, AM
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56. Petsos, G; Vargiamidis, V
    Stochastic nucleation and growth of islands on surfaces with the theory ofnon-classical nucleation
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57. de Theije, FK; Schermer, JJ; van Enckevort, WJP
    Effects of nitrogen impurities on the CVD growth of diamond: step bunchingin theory and experiment
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58. Takeuchi, D; Watanabe, H; Yamanaka, S; Okushi, H; Kajimura, K
    Homoepitaxial diamond films grown by step-flow mode in various misorientation angles of diamond substrates
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59. Pruvost, F; Bustarret, E; Deneuville, A
    Characteristics of homoepitaxial heavily boron-doped diamond films from their Raman spectra
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60. Inushima, T; Matsushita, T; Ohya, S; Shiomi, H
    Hopping conduction via the excited states of boron in p-type diamond
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61. Ballutaud, D; Jomard, F; Le Duigou, J; Theys, B; Chevallier, J; Deneuville, A; Pruvost, F
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62. Sugahara, T; Sakai, S
    Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates
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63. Zverev, AV; Neizvestny, IG; Shwartz, NL; Yanovitskaya, ZS
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64. Eliseev, PG; Osinski, M; Lee, JY; Sugahara, T; Sakai, S
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65. Takahashi, T; Kawamukai, T
    Phase detection of electrostatic force by AFM with a conductive tip
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66. Xu, MC; Qian, HJ; Liu, FQ; Krash, I; Lai, WY; Wu, SC
    Pb surfactant-assisted Co film growth on Cu(111)
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67. Zhuang, GC; Wang, JF; Wang, W
    Scaling laws of reversible aggregation in compact cluster systems
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68. Neizvestny, IG; Shwartz, NL; Yanovitskaja, ZS
    2D island system formation during initial stage of MBE growth with large critical island size
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69. Koponen, IT
    Modeling layer-by-layer growth in ion beam assisted deposition of thin films
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
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70. Kotrla, M; Krug, J; Smilauer, P
    Submonolayer epitaxy with impurities: Kinetic Monte Carlo simulations and rate-equation analysis
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71. Pfandzelter, R; Igel, T; Winter, H
    Real-time study of nucleation, growth, and ripening during Fe/Fe(100) homoepitaxy using ion scattering
    PHYSICAL REVIEW B
    
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72. Itoh, M; Ohno, T
    Absence of a step-edge barrier on a polar semiconductor surface with reconstruction
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73. Prieto, JE; de la Figuera, J; Miranda, R
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75. Furman, I; Biham, O; Zuo, JK; Swan, AK; Wendelken, JF
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76. Karr, BW; Cahill, DG; Petrov, I; Greene, JE
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78. Krug, J; Politi, P; Michely, T
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80. Degroote, B; Pattyn, H; Degroote, S; Vantomme, A; Dekoster, J; Langouche, G
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85. Stoldt, CR; Caspersen, KJ; Bartelt, MC; Jenks, CJ; Evans, JW; Thiel, PA
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86. Bracker, AS; Yang, MJ; Bennett, BR; Culbertson, JC; Moore, WJ
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87. Frayssinet, E; Knap, W; Prystawko, P; Leszczynski, M; Grzegory, I; Suski, T; Beaumont, B; Gibart, P
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88. Yoshioka, Y; Shimizu, K; Takagaki, K; Kasuga, M
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89. Kozlovsky, VI; Krysa, AB; Korostelin, YV; Sadofyev, YG
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97. Owen, JHG; Barvosa-Carter, W; Zinck, JJ
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