Le informazioni sugli articoli di fonte ISI sono coperte da copyright

Per ulteriori informazioni selezionare i riferimenti di interesse.

1. Li, MW; Li, YR; Imaishi, N; Tsukada, T
   Global simulation of a silicon Czochralski furnace
   JOURNAL OF CRYSTAL GROWTH
   
   M.W. Li et al., "Global simulation of a silicon Czochralski furnace", J CRYST GR, 234(1), 2002, pp. 32-46
2. Gunzburger, M; Ozugurlu, E; Turner, J; Zhang, H
   Controlling transport phenomena in the Czochralski crystal growth process
   JOURNAL OF CRYSTAL GROWTH
   
   M. Gunzburger et al., "Controlling transport phenomena in the Czochralski crystal growth process", J CRYST GR, 234(1), 2002, pp. 47-62
3. Yamasuea, E; Susa, M; Fukuyama, H; Nagata, K
   Thermal conductivities of silicon and germanium in solid and liquid statesmeasured by non-stationary hot wire method with silica coated probe
   JOURNAL OF CRYSTAL GROWTH
   
   E. Yamasuea et al., "Thermal conductivities of silicon and germanium in solid and liquid statesmeasured by non-stationary hot wire method with silica coated probe", J CRYST GR, 234(1), 2002, pp. 121-131
4. Dariel, MP; Dashevsky, Z; Jarashnely, A; Shusterman, S; Horowitz, A
   Carrier concentration gradient generated in p-type PbTe crystals by unidirectional solidification
   JOURNAL OF CRYSTAL GROWTH
   
   M.P. Dariel et al., "Carrier concentration gradient generated in p-type PbTe crystals by unidirectional solidification", J CRYST GR, 234(1), 2002, pp. 164-170
5. Kohno, H; Tanahashi, T
   Three-dimensional numerical simulation of unsteady Marangoni convection inthe CZ method using GSMAC-FEM
   CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES
   
   H. Kohno e T. Tanahashi, "Three-dimensional numerical simulation of unsteady Marangoni convection inthe CZ method using GSMAC-FEM", CMES-COMP M, 2(2), 2001, pp. 155-170
6. Lee, DK; Hwang, DH; Lee, SH; Mun, YH; Lee, BY; Yoo, HD
   The study on the radial distribution of delta [Oi] in heavily doped Si wafer using X-ray diffraction
   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
   
   D.K. Lee et al., "The study on the radial distribution of delta [Oi] in heavily doped Si wafer using X-ray diffraction", MAT SC S PR, 4(1-3), 2001, pp. 47-49
7. Imai, M; Nakahara, S; Inoue, K; Mayusumi, M; Gima, S
   Epitaxial growth with monosilane gas on a 400 mm diameter silicon wafer
   ELECTROCHEMICAL AND SOLID STATE LETTERS
   
   M. Imai et al., "Epitaxial growth with monosilane gas on a 400 mm diameter silicon wafer", EL SOLID ST, 4(3), 2001, pp. G23-G25
8. Litvinov, VV; Murin, LI; Lindstrom, L; Markevich, VP; Klechko, AA
   Vibration modes of oxygen dimers in germanium
   SEMICONDUCTORS
   
   V.V. Litvinov et al., "Vibration modes of oxygen dimers in germanium", SEMICONDUCT, 35(8), 2001, pp. 864-869
9. Muller-Krumbhaar, H; Emmerich, H; Brener, E; Hartmann, M
   Dewetting hydrodynamics in 1+1 dimensions - art. no. 026304
   PHYSICAL REVIEW E
   
   H. Muller-Krumbhaar et al., "Dewetting hydrodynamics in 1+1 dimensions - art. no. 026304", PHYS REV E, 6302(2), 2001, pp. 6304
10. Muhlstein, CL; Brown, SB; Ritchie, RO
    High-cycle fatigue of single-crystal silicon thin films
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    
    C.L. Muhlstein et al., "High-cycle fatigue of single-crystal silicon thin films", J MICROEL S, 10(4), 2001, pp. 593-600
11. Neubert, M; Rudolph, P
    Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
    
    M. Neubert e P. Rudolph, "Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)", PROG CRYST, 43(2-3), 2001, pp. 119-185
12. Emtsev, VV; Ammerlaan, CAJ; Andreev, BA; Emtsev, VV; Oganesyan, GA; Misiuk, A; Londos, CA
    Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    
    V.V. Emtsev et al., "Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure", J MAT S-M E, 12(4-6), 2001, pp. 223-225
13. Glunz, SW; Rein, S; Warta, W; Knobloch, J; Wettling, W
    Degradation of carrier lifetime in Cz silicon solar cells
    SOLAR ENERGY MATERIALS AND SOLAR CELLS
    
    S.W. Glunz et al., "Degradation of carrier lifetime in Cz silicon solar cells", SOL EN MAT, 65(1-4), 2001, pp. 219-229
14. Misiuk, A; Surma, HB; Bak-Misiuk, J; Lopez, M; Romano-Rodriguez, A; Hartwig, J
    Microstructure of Czochralski silicon annealed at enhanced stress conditions
    JOURNAL OF ALLOYS AND COMPOUNDS
    
    A. Misiuk et al., "Microstructure of Czochralski silicon annealed at enhanced stress conditions", J ALLOY COM, 328(1-2), 2001, pp. 90-96
15. Murin, LI; Markevich, VP; Suezawa, M; Lindstrom, JL; Kleverman, M; Hallberg, T
    Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies
    PHYSICA B
    
    L.I. Murin et al., "Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies", PHYSICA B, 302, 2001, pp. 180-187
16. Yang, DR; Klevermann, M; Murin, LI
    Shallow thermal donors in silicon doped with isotopic oxygen
    PHYSICA B
    
    D.R. Yang et al., "Shallow thermal donors in silicon doped with isotopic oxygen", PHYSICA B, 302, 2001, pp. 193-196
17. Litvinov, VV; Murin, LI; Markevich, VP; Lindstrom, JL; Klechko, AA
    Enhancement of thermal donor formation in germanium by preliminary irradiation: infrared absorption measurements
    PHYSICA B
    
    V.V. Litvinov et al., "Enhancement of thermal donor formation in germanium by preliminary irradiation: infrared absorption measurements", PHYSICA B, 302, 2001, pp. 201-205
18. Langhanki, B; Greulich-Weber, S; Spaeth, JM; Markevich, VP; Murin, LI; Mchedlidze, T; Suezawa, M
    Magnetic resonance studies of shallow donor centers in hydrogenated Cz-Si crystals
    PHYSICA B
    
    B. Langhanki et al., "Magnetic resonance studies of shallow donor centers in hydrogenated Cz-Si crystals", PHYSICA B, 302, 2001, pp. 212-219
19. Ueda, T; Higuchi, M; Kodaira, K
    Growth of Bi12GeO20 single crystals by the pulling-down method with a continuous powder feed system
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    
    T. Ueda et al., "Growth of Bi12GeO20 single crystals by the pulling-down method with a continuous powder feed system", J CERAM S J, 109(7), 2001, pp. 627-630
20. Guo, JQ; Tsai, AP
    Single-crystal growth of the Al-Cu-Fe icosahedral quasicrystal from the ternary melt
    JOURNAL OF MATERIALS RESEARCH
    
    J.Q. Guo e A.P. Tsai, "Single-crystal growth of the Al-Cu-Fe icosahedral quasicrystal from the ternary melt", J MATER RES, 16(11), 2001, pp. 3038-3041
21. Doremus, RH
    Diffusion of oxygen and silicon in silicon: Silicon monoxide model
    JOURNAL OF MATERIALS RESEARCH
    
    R.H. Doremus, "Diffusion of oxygen and silicon in silicon: Silicon monoxide model", J MATER RES, 16(1), 2001, pp. 185-191
22. Pendurti, S; Zhang, H; Prasad, V
    Modelling of transport phenomena and defects in crystal growth precesses
    SADHANA-ACADEMY PROCEEDINGS IN ENGINEERING SCIENCES
    
    S. Pendurti et al., "Modelling of transport phenomena and defects in crystal growth precesses", SADHANA, 26, 2001, pp. 71-101
23. Wang, JH; Oh, HJ; Yoo, HD
    Numerical analysis for the dynamics of the oxidation-induced stacking fault in Czochralski-grown silicon crystals
    KOREAN JOURNAL OF CHEMICAL ENGINEERING
    
    J.H. Wang et al., "Numerical analysis for the dynamics of the oxidation-induced stacking fault in Czochralski-grown silicon crystals", KOR J CHEM, 18(1), 2001, pp. 81-87
24. Udayashankar, NK; Bhat, HL
    Growth and characterization of indium antimonide and gallium antimonide crystals
    BULLETIN OF MATERIALS SCIENCE
    
    N.K. Udayashankar e H.L. Bhat, "Growth and characterization of indium antimonide and gallium antimonide crystals", B MATER SCI, 24(5), 2001, pp. 445-453
25. Aleksiyko, R; Berkowski, M; Byszewski, P; Dabrowski, B; Diduszko, R; Fink-Finowicki, J; Vasylechko, LO
    Common features of gallium perovskites
    CRYSTAL RESEARCH AND TECHNOLOGY
    
    R. Aleksiyko et al., "Common features of gallium perovskites", CRYST RES T, 36(8-10), 2001, pp. 789-800
26. Sakowska, H; Swirkowicz, M; Mazur, K; Lukasiewicz, T; Witek, A
    Growth and characterization of (La,Sr)(Al,Ta)O-3 single crystals: a promising substrate for GaN epitaxial growth
    CRYSTAL RESEARCH AND TECHNOLOGY
    
    H. Sakowska et al., "Growth and characterization of (La,Sr)(Al,Ta)O-3 single crystals: a promising substrate for GaN epitaxial growth", CRYST RES T, 36(8-10), 2001, pp. 851-858
27. Lin, K; Dold, P
    Radiative heat transfer in a resistance heated floating zone furnace: A numerical study with FIDAP (TM)
    CRYSTAL RESEARCH AND TECHNOLOGY
    
    K. Lin e P. Dold, "Radiative heat transfer in a resistance heated floating zone furnace: A numerical study with FIDAP (TM)", CRYST RES T, 36(7), 2001, pp. 629-639
28. Miller, W
    Using a phase-field-like approach for the calculation of melt flow and interface shape during Czochralski growth
    CRYSTAL RESEARCH AND TECHNOLOGY
    
    W. Miller, "Using a phase-field-like approach for the calculation of melt flow and interface shape during Czochralski growth", CRYST RES T, 36(7), 2001, pp. 675-683
29. Miller, W; Rehse, U
    Numerical simulation of temperature and flow field in the melt for the vapour-pressure-controlled Czochralski growth of GaAs
    CRYSTAL RESEARCH AND TECHNOLOGY
    
    W. Miller e U. Rehse, "Numerical simulation of temperature and flow field in the melt for the vapour-pressure-controlled Czochralski growth of GaAs", CRYST RES T, 36(7), 2001, pp. 685-694
30. Lukasiewicz, T; Ryba-Romanowski, W; Sokolska, J; Swirkowicz, M; Golab, S; Galazka, Z
    Growth and optical properties of doped LiTaO3 single crystals
    CRYSTAL RESEARCH AND TECHNOLOGY
    
    T. Lukasiewicz et al., "Growth and optical properties of doped LiTaO3 single crystals", CRYST RES T, 36(2), 2001, pp. 127-134
31. Shim, JB; Yoshimoto, N; Yoshizawa, M; Yoon, DH
    Structural characteristics of Er doped LiNbO3 thin films grown by the liquid phase epitaxy method
    CRYSTAL RESEARCH AND TECHNOLOGY
    
    J.B. Shim et al., "Structural characteristics of Er doped LiNbO3 thin films grown by the liquid phase epitaxy method", CRYST RES T, 36(11), 2001, pp. 1209-1214
32. Okada, Y; Zhang, X; Sugiyama, H; Imai, Y; Rahman, MO; Higashi, Y; Nakayama, K; Fujimoto, H; Yoda, Y; Ando, M
    Precision d-spacing measurement of GaAs single crystals with synchrotron radiation
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    
    Y. Okada et al., "Precision d-spacing measurement of GaAs single crystals with synchrotron radiation", NUCL INST A, 467, 2001, pp. 1037-1040
33. Huth, S; Breitenstein, O; Huber, A; Dantz, D; Lambert, U
    Localization and detailed investigation of gate oxide integrity defects insilicon MOS structures
    MICROELECTRONIC ENGINEERING
    
    S. Huth et al., "Localization and detailed investigation of gate oxide integrity defects insilicon MOS structures", MICROEL ENG, 59(1-4), 2001, pp. 109-113
34. Tu, H; Zhou, Q; Zhang, G; Wang, J; Chang, Q; Qin, F; Fang, F; Wu, Z; Wan, G
    The growth technology for 300 mm single crystal silicon
    MICROELECTRONIC ENGINEERING
    
    H. Tu et al., "The growth technology for 300 mm single crystal silicon", MICROEL ENG, 56(1-2), 2001, pp. 77-82
35. Grabner, O; Muller, G; Virbulis, J; Tomzig, E; Von Ammon, W
    Effects of various magnetic field configurations on temperature distributions in Czochralski silicon melts
    MICROELECTRONIC ENGINEERING
    
    O. Grabner et al., "Effects of various magnetic field configurations on temperature distributions in Czochralski silicon melts", MICROEL ENG, 56(1-2), 2001, pp. 83-88
36. Evstratov, IY; Kalaev, VV; Nabokov, VN; Zhmakin, AI; Makarov, YN; Abramov, AG; Ivanov, NG; Rudinsky, EA; Smirnov, EM; Lowry, SA; Dornberger, E; Virbulis, J; Tomzig, E; Von Ammon, W
    Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interface
    MICROELECTRONIC ENGINEERING
    
    I.Y. Evstratov et al., "Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interface", MICROEL ENG, 56(1-2), 2001, pp. 139-142
37. Muhe, A; Muller, G
    Optical in-situ measurement of the dissolution rate of a silica-Czochralski-crucible with silicon melt and comparison to ex-situ measurements
    MICROELECTRONIC ENGINEERING
    
    A. Muhe e G. Muller, "Optical in-situ measurement of the dissolution rate of a silica-Czochralski-crucible with silicon melt and comparison to ex-situ measurements", MICROEL ENG, 56(1-2), 2001, pp. 147-152
38. Voronkov, VV; Falster, R
    Effect of doping on point defect incorporation during silicon growth
    MICROELECTRONIC ENGINEERING
    
    V.V. Voronkov e R. Falster, "Effect of doping on point defect incorporation during silicon growth", MICROEL ENG, 56(1-2), 2001, pp. 165-168
39. Li, LB; Yang, DR
    Transmission electron microscopic observation of oxygen precipitates in nitrogen-doped silicon
    MICROELECTRONIC ENGINEERING
    
    L.B. Li e D.R. Yang, "Transmission electron microscopic observation of oxygen precipitates in nitrogen-doped silicon", MICROEL ENG, 56(1-2), 2001, pp. 205-208
40. Jung, IH; Kang, YH; Joo, K; Yoshikawa, A; Fukuda, T; Auh, KH
    Ca3Ga2Ge4O14 (CGG)-type Sr3Nb0.95Ga3.083Si2O14 single crystal grown by theCzochralski method for piezoelectric applications
    MATERIALS LETTERS
    
    I.H. Jung et al., "Ca3Ga2Ge4O14 (CGG)-type Sr3Nb0.95Ga3.083Si2O14 single crystal grown by theCzochralski method for piezoelectric applications", MATER LETT, 51(2), 2001, pp. 129-134
41. Furuya, H; Harada, K; Park, JG
    Defect reduction and improved gettering in CZ single-crystal silicon
    SOLID STATE TECHNOLOGY
    
    H. Furuya et al., "Defect reduction and improved gettering in CZ single-crystal silicon", SOL ST TECH, 44(6), 2001, pp. 109
42. Gulluoglu, AN; Zhu, XN; Tsai, CT
    Theoretical study of the formation of deformation twins in GaAs crystals grown by the vertical gradient freeze method
    JOURNAL OF MATERIALS SCIENCE
    
    A.N. Gulluoglu et al., "Theoretical study of the formation of deformation twins in GaAs crystals grown by the vertical gradient freeze method", J MATER SCI, 36(14), 2001, pp. 3557-3563
43. Won, YC; Kakimoto, K; Ozoe, H
    Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field
    JOURNAL OF CRYSTAL GROWTH
    
    Y.C. Won et al., "Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field", J CRYST GR, 233(4), 2001, pp. 622-630
44. Hayakawa, Y; Krishnamurthy, D; Ohsawa, H; Nakano, H; Koyama, T; Kumagawa, M
    Study of Al segregation phenomenon during Czochralski growth of AlxGa1-xSb
    JOURNAL OF CRYSTAL GROWTH
    
    Y. Hayakawa et al., "Study of Al segregation phenomenon during Czochralski growth of AlxGa1-xSb", J CRYST GR, 233(4), 2001, pp. 660-666
45. Vizman, D; Grabner, O; Muller, G
    Three-dimensional numerical simulation of thermal convection in an industrial Czochralski melt: comparison to experimental results
    JOURNAL OF CRYSTAL GROWTH
    
    D. Vizman et al., "Three-dimensional numerical simulation of thermal convection in an industrial Czochralski melt: comparison to experimental results", J CRYST GR, 233(4), 2001, pp. 687-698
46. Yuan, QX; Zhao, CH; Luo, WP; Yin, XF; Xu, J; Pan, SK
    Crystal growth of beta '-Gd-2(MoO4)(3) and in situ observation of its domain structure by the microscope and the synchrotron X-ray topography
    JOURNAL OF CRYSTAL GROWTH
    
    Q.X. Yuan et al., "Crystal growth of beta '-Gd-2(MoO4)(3) and in situ observation of its domain structure by the microscope and the synchrotron X-ray topography", J CRYST GR, 233(4), 2001, pp. 717-722
47. Zhang, Y; Xu, YH; Li, MH; Zhao, YQ
    Growth and properties of Zn doped lithium niobate crystal
    JOURNAL OF CRYSTAL GROWTH
    
    Y. Zhang et al., "Growth and properties of Zn doped lithium niobate crystal", J CRYST GR, 233(3), 2001, pp. 537-540
48. Scheel, HJ; Swendsen, RH
    Evaluation of experimental parameters for growth of homogeneous solid solutions
    JOURNAL OF CRYSTAL GROWTH
    
    H.J. Scheel e R.H. Swendsen, "Evaluation of experimental parameters for growth of homogeneous solid solutions", J CRYST GR, 233(3), 2001, pp. 609-617
49. Azami, T; Nakamura, S; Eguchi, M; Hibiya, T
    The role of surface-tension-driven flow in the formation of a surface pattern on a Czochralski silicon melt
    JOURNAL OF CRYSTAL GROWTH
    
    T. Azami et al., "The role of surface-tension-driven flow in the formation of a surface pattern on a Czochralski silicon melt", J CRYST GR, 233(1-2), 2001, pp. 99-107
50. Haumesser, PH; Gaume, R; Benitez, JM; Viana, B; Ferrand, B; Aka, G; Vivien, D
    Czochralski growth of six Yb-doped double borate and silicate laser materials
    JOURNAL OF CRYSTAL GROWTH
    
    P.H. Haumesser et al., "Czochralski growth of six Yb-doped double borate and silicate laser materials", J CRYST GR, 233(1-2), 2001, pp. 233-242
51. Wang, ZH; Brown, RA
    Simulation of almost defect-free silicon crystal growth
    JOURNAL OF CRYSTAL GROWTH
    
    Z.H. Wang e R.A. Brown, "Simulation of almost defect-free silicon crystal growth", J CRYST GR, 231(4), 2001, pp. 442-447
52. Naumann, M; Rudolph, P; Neubert, M; Donecker, J
    Dislocation studies in VCz GaAs by laser scattering tomography
    JOURNAL OF CRYSTAL GROWTH
    
    M. Naumann et al., "Dislocation studies in VCz GaAs by laser scattering tomography", J CRYST GR, 231(1-2), 2001, pp. 22-30
53. Bensalah, A; Shimamura, K; Nakano, K; Fujita, T; Fukuda, T
    Growth and characterization of LiSrGaF6 single crystal
    JOURNAL OF CRYSTAL GROWTH
    
    A. Bensalah et al., "Growth and characterization of LiSrGaF6 single crystal", J CRYST GR, 231(1-2), 2001, pp. 143-147
54. Rossolenko, SN
    Menisci masses and weights in Stepanov (EFG) technique: ribbon, rod, tube
    JOURNAL OF CRYSTAL GROWTH
    
    S.N. Rossolenko, "Menisci masses and weights in Stepanov (EFG) technique: ribbon, rod, tube", J CRYST GR, 231(1-2), 2001, pp. 306-315
55. Miller, W; Schroder, W
    Numerical modeling at the IKZ: an overview and outlook
    JOURNAL OF CRYSTAL GROWTH
    
    W. Miller e W. Schroder, "Numerical modeling at the IKZ: an overview and outlook", J CRYST GR, 230(1-2), 2001, pp. 1-9
56. Evstratov, IY; Kalaev, VV; Zhmakin, AI; Makarov, YN; Abramov, AG; Ivanov, NG; Smirnov, EM; Dornberger, E; Virbulis, J; Tomzig, E; von Ammon, W
    Modeling analysis of unsteady three-dimensional turbulent melt flow duringCzochralski growth of Si crystals
    JOURNAL OF CRYSTAL GROWTH
    
    I.Y. Evstratov et al., "Modeling analysis of unsteady three-dimensional turbulent melt flow duringCzochralski growth of Si crystals", J CRYST GR, 230(1-2), 2001, pp. 22-29
57. Nikitin, N; Polezhaev, V
    Direct simulations and stability analysis of the gravity driven convectionin a Czochralski model
    JOURNAL OF CRYSTAL GROWTH
    
    N. Nikitin e V. Polezhaev, "Direct simulations and stability analysis of the gravity driven convectionin a Czochralski model", J CRYST GR, 230(1-2), 2001, pp. 30-39
58. Polezhaev, VI; Bessonov, OA; Nikitin, NV; Nikitin, SA
    Convective interaction and instabilities in GaAs Czochralski model
    JOURNAL OF CRYSTAL GROWTH
    
    V.I. Polezhaev et al., "Convective interaction and instabilities in GaAs Czochralski model", J CRYST GR, 230(1-2), 2001, pp. 40-47
59. Vizman, D; Friedrich, J; Muller, G
    Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si Czochralski melts under the influence of different magnetic fields
    JOURNAL OF CRYSTAL GROWTH
    
    D. Vizman et al., "Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si Czochralski melts under the influence of different magnetic fields", J CRYST GR, 230(1-2), 2001, pp. 73-80
60. Wetzel, T; Muiznieks, A; Muhlbauer, A; Gelfgat, Y; Gorbunov, L; Virbulis, J; Tomzig, E; von Ammon, W
    Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility
    JOURNAL OF CRYSTAL GROWTH
    
    T. Wetzel et al., "Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility", J CRYST GR, 230(1-2), 2001, pp. 81-91
61. Virbulis, J; Wetzel, T; Muiznieks, A; Hanna, B; Dornberger, E; Tomzig, E; Muhlbauer, A; von Ammon, W
    Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields
    JOURNAL OF CRYSTAL GROWTH
    
    J. Virbulis et al., "Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields", J CRYST GR, 230(1-2), 2001, pp. 92-99
62. Kakimoto, K
    Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields
    JOURNAL OF CRYSTAL GROWTH
    
    K. Kakimoto, "Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields", J CRYST GR, 230(1-2), 2001, pp. 100-107
63. Enger, S; Grabner, O; Muller, G; Breuer, M; Durst, F
    Comparison of measurements and numerical simulations of melt convection inCzochralski crystal growth of silicon
    JOURNAL OF CRYSTAL GROWTH
    
    S. Enger et al., "Comparison of measurements and numerical simulations of melt convection inCzochralski crystal growth of silicon", J CRYST GR, 230(1-2), 2001, pp. 135-142
64. Rehse, U; Miller, W; Frank, C; Rudolph, P; Neubert, M
    A numerical investigation of the effects of iso- and counter-rotation on the shape of the VCz growth interface
    JOURNAL OF CRYSTAL GROWTH
    
    U. Rehse et al., "A numerical investigation of the effects of iso- and counter-rotation on the shape of the VCz growth interface", J CRYST GR, 230(1-2), 2001, pp. 143-147
65. Basu, B; Enger, S; Breuer, M; Durst, F
    Effect of crystal rotation on the three-dimensional mixed convection in the oxide melt for Czochralski growth
    JOURNAL OF CRYSTAL GROWTH
    
    B. Basu et al., "Effect of crystal rotation on the three-dimensional mixed convection in the oxide melt for Czochralski growth", J CRYST GR, 230(1-2), 2001, pp. 148-154
66. Kokh, AE; Popov, VN; Mokrushnikov, PW
    Numerical modeling of contact-free control over crystal growth heat-mass transfer processes through heat field rotation
    JOURNAL OF CRYSTAL GROWTH
    
    A.E. Kokh et al., "Numerical modeling of contact-free control over crystal growth heat-mass transfer processes through heat field rotation", J CRYST GR, 230(1-2), 2001, pp. 155-163
67. Gevelber, M; Wilson, D; Duanmu, N
    Modelling requirements for development of an advanced Czochralski control system
    JOURNAL OF CRYSTAL GROWTH
    
    M. Gevelber et al., "Modelling requirements for development of an advanced Czochralski control system", J CRYST GR, 230(1-2), 2001, pp. 217-223
68. Dornberger, E; von Ammon, W; Virbulis, J; Hanna, B; Sinno, T
    Modeling of transient point defect dynamics in Czochralski silicon crystals
    JOURNAL OF CRYSTAL GROWTH
    
    E. Dornberger et al., "Modeling of transient point defect dynamics in Czochralski silicon crystals", J CRYST GR, 230(1-2), 2001, pp. 291-299
69. Muiznieks, A; Raming, G; Muhlbauer, A; Virbulis, J; Hanna, B; Von Ammon, W
    Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations
    JOURNAL OF CRYSTAL GROWTH
    
    A. Muiznieks et al., "Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations", J CRYST GR, 230(1-2), 2001, pp. 305-313
70. Huang, XM; Taishi, T; Wang, TF; Hoshikawa, K
    Measurement of temperature gradient in Czochralski silicon crystal growth
    JOURNAL OF CRYSTAL GROWTH
    
    X.M. Huang et al., "Measurement of temperature gradient in Czochralski silicon crystal growth", J CRYST GR, 229(1), 2001, pp. 6-10
71. Dornberger, E; Virbulis, J; Hanna, B; Hoelzl, R; Daub, E; von Ammon, W
    Silicon crystals for future requirements of 300 mm wafers
    JOURNAL OF CRYSTAL GROWTH
    
    E. Dornberger et al., "Silicon crystals for future requirements of 300 mm wafers", J CRYST GR, 229(1), 2001, pp. 11-16
72. Shiraishi, Y; Takano, K; Matsubara, J; Iida, T; Takase, N; Machida, N; Kuramoto, M; Yamagishi, H
    Growth of silicon crystal with a diameter of 400 mm and weight of 400 kg
    JOURNAL OF CRYSTAL GROWTH
    
    Y. Shiraishi et al., "Growth of silicon crystal with a diameter of 400 mm and weight of 400 kg", J CRYST GR, 229(1), 2001, pp. 17-21
73. Takano, K; Shiraishi, Y; Matsubara, J; Iida, T; Takase, N; Machida, N; Kuramoto, M; Yamagishi, H
    Global simulation of the CZ silicon crystal growth up to 400 mm in diameter
    JOURNAL OF CRYSTAL GROWTH
    
    K. Takano et al., "Global simulation of the CZ silicon crystal growth up to 400 mm in diameter", J CRYST GR, 229(1), 2001, pp. 26-30
74. Yu, YM; Ju, JJ; Cha, M
    Growth and spectroscopic properties of Er,Yb : YCOB crystals
    JOURNAL OF CRYSTAL GROWTH
    
    Y.M. Yu et al., "Growth and spectroscopic properties of Er,Yb : YCOB crystals", J CRYST GR, 229(1), 2001, pp. 175-178
75. Katsurayama, M; Anzai, Y; Sugiyama, A; Koike, M; Kato, Y
    Growth of neodymium doped Y3Al5O12 single crystals by double crucible method
    JOURNAL OF CRYSTAL GROWTH
    
    M. Katsurayama et al., "Growth of neodymium doped Y3Al5O12 single crystals by double crucible method", J CRYST GR, 229(1), 2001, pp. 193-198
76. Sasaura, M; Horikoshi, T; Ono, M; Imai, T; Yagi, S; Kubota, E; Tate, A; Kojima, H; Sonehara, N
    Proposal and demonstration of cached holographic 3D display system using photorefractive crystals
    JOURNAL OF CRYSTAL GROWTH
    
    M. Sasaura et al., "Proposal and demonstration of cached holographic 3D display system using photorefractive crystals", J CRYST GR, 229(1), 2001, pp. 199-204
77. Kubota, E; Yamazaki, H; Ono, M; Sasaura, M; Yagi, S; Imai, T; Tate, A
    Large size SBN single crystal growth by the resistance-heating Czochralskitechnique using crucible-base cooling
    JOURNAL OF CRYSTAL GROWTH
    
    E. Kubota et al., "Large size SBN single crystal growth by the resistance-heating Czochralskitechnique using crucible-base cooling", J CRYST GR, 229(1), 2001, pp. 217-222
78. Galambos, L; Orlov, SS; Hesselink, L; Furukawa, Y; Kitamura, K; Takekawa, S
    Doubly doped stoichiometric and congruent lithium niobate for holographic data storage
    JOURNAL OF CRYSTAL GROWTH
    
    L. Galambos et al., "Doubly doped stoichiometric and congruent lithium niobate for holographic data storage", J CRYST GR, 229(1), 2001, pp. 228-232
79. Kumaragurubaran, S; Babu, SM; Kitamura, K; Takegawa, S; Subramanian, C
    Defect analysis in Czochralski grown Bi12SiO20 crystals
    JOURNAL OF CRYSTAL GROWTH
    
    S. Kumaragurubaran et al., "Defect analysis in Czochralski grown Bi12SiO20 crystals", J CRYST GR, 229(1), 2001, pp. 233-237
80. Kim, IG; Takekawa, S; Furukawa, Y; Lee, M; Kitamura, K
    Growth of LixTa1-xO3 single crystals and their optical properties
    JOURNAL OF CRYSTAL GROWTH
    
    I.G. Kim et al., "Growth of LixTa1-xO3 single crystals and their optical properties", J CRYST GR, 229(1), 2001, pp. 243-247
81. Furuya, H; Nakao, H; Kawamura, K; Yap, YK; Yoshimura, M; Mori, Y; Sasaki, T
    Dependence of gray-track threshold of GdYCOB on the crystal growth atmosphere
    JOURNAL OF CRYSTAL GROWTH
    
    H. Furuya et al., "Dependence of gray-track threshold of GdYCOB on the crystal growth atmosphere", J CRYST GR, 229(1), 2001, pp. 265-269
82. Kumatoriya, M; Sato, H; Nakanishi, J; Fujii, T; Kadota, M; Sakabe, Y
    Crystal growth and electromechanical properties of Al substituted langasite (La3Ga5-xAlxSiO14)
    JOURNAL OF CRYSTAL GROWTH
    
    M. Kumatoriya et al., "Crystal growth and electromechanical properties of Al substituted langasite (La3Ga5-xAlxSiO14)", J CRYST GR, 229(1), 2001, pp. 289-293
83. Borovlev, YA; Ivannikova, NV; Shlegel, VN; Vasiliev, YV; Gusev, VA
    Progress in growth of large sized BGO crystals by the low-thermal-gradientCzochralski technique
    JOURNAL OF CRYSTAL GROWTH
    
    Y.A. Borovlev et al., "Progress in growth of large sized BGO crystals by the low-thermal-gradientCzochralski technique", J CRYST GR, 229(1), 2001, pp. 305-311
84. Nikl, M; Bohacek, P; Mihokova, E; Solovieva, N; Martini, M; Vedda, A; Fabeni, P; Pazzi, GP; Kobayashi, M; Ishii, M; Usuki, Y; Zimmerman, D
    Modification of PbWO4 scintillator characteristics by doping
    JOURNAL OF CRYSTAL GROWTH
    
    M. Nikl et al., "Modification of PbWO4 scintillator characteristics by doping", J CRYST GR, 229(1), 2001, pp. 312-315
85. Yamaga, M; Imai, T; Shimamura, K; Fukuda, T
    Optical and ESR studies of Ce3+ in perovskite fluoride crystals BaLiF3 andKMgF3
    JOURNAL OF CRYSTAL GROWTH
    
    M. Yamaga et al., "Optical and ESR studies of Ce3+ in perovskite fluoride crystals BaLiF3 andKMgF3", J CRYST GR, 229(1), 2001, pp. 487-491
86. Maroni, P; Palatella, L; Toncelli, A; Tonelli, M
    Fluoride crystals: 2 mu m Ho3+ laser emission and energy transfer mechanisms in Er3+
    JOURNAL OF CRYSTAL GROWTH
    
    P. Maroni et al., "Fluoride crystals: 2 mu m Ho3+ laser emission and energy transfer mechanisms in Er3+", J CRYST GR, 229(1), 2001, pp. 497-500
87. Kozeki, T; Suzuki, Y; Sakai, M; Ohtake, H; Sarukura, N; Liu, ZL; Shimamura, K; Nakano, K; Fukuda, T
    Observation of new excitation channel of cerium ion through highly vacuum ultraviolet transparent LiCAF host crystal
    JOURNAL OF CRYSTAL GROWTH
    
    T. Kozeki et al., "Observation of new excitation channel of cerium ion through highly vacuum ultraviolet transparent LiCAF host crystal", J CRYST GR, 229(1), 2001, pp. 501-504
88. Azhdarov, GK; Kucukomeroglu, T; Varilci, A; Altunbas, M; Kobya, A; Azhdarov, PG
    Distribution of components in Ge-Si bulk single crystals grown under the continuous feeding of the melt with the second component (Si)
    JOURNAL OF CRYSTAL GROWTH
    
    G.K. Azhdarov et al., "Distribution of components in Ge-Si bulk single crystals grown under the continuous feeding of the melt with the second component (Si)", J CRYST GR, 226(4), 2001, pp. 437-442
89. Hu, BQ; Zhang, YZ; Wu, X; Chen, XL
    Defects in large single crystals Nd : YVO4
    JOURNAL OF CRYSTAL GROWTH
    
    B.Q. Hu et al., "Defects in large single crystals Nd : YVO4", J CRYST GR, 226(4), 2001, pp. 511-516
90. Antonov, VA
    Analysis of crystal-meniscus system behaviour under Czochralski crystal growth
    JOURNAL OF CRYSTAL GROWTH
    
    V.A. Antonov, "Analysis of crystal-meniscus system behaviour under Czochralski crystal growth", J CRYST GR, 226(4), 2001, pp. 555-561
91. Voronkov, VV; Falster, R
    Diffusion-limited growth of single- and double-octahedral voids in siliconand the effect of surface oxygen monolayer
    JOURNAL OF CRYSTAL GROWTH
    
    V.V. Voronkov e R. Falster, "Diffusion-limited growth of single- and double-octahedral voids in siliconand the effect of surface oxygen monolayer", J CRYST GR, 226(2-3), 2001, pp. 192-202
92. von Ammon, W; Holzl, R; Virbulis, J; Dornberger, E; Schmolke, R; Graf, D
    The impact of nitrogen on the defect aggregation in silicon
    JOURNAL OF CRYSTAL GROWTH
    
    W. von Ammon et al., "The impact of nitrogen on the defect aggregation in silicon", J CRYST GR, 226(1), 2001, pp. 19-30
93. Yonenaga, I
    Czochralski growth of heavily impurity doped crystals of GeSi alloys
    JOURNAL OF CRYSTAL GROWTH
    
    I. Yonenaga, "Czochralski growth of heavily impurity doped crystals of GeSi alloys", J CRYST GR, 226(1), 2001, pp. 47-51
94. Yang, C; Guo, Y; Shi, P; Chen, G
    Growth of large PbWO4 single crystals by Czochralski method
    JOURNAL OF CRYSTAL GROWTH
    
    C. Yang et al., "Growth of large PbWO4 single crystals by Czochralski method", J CRYST GR, 226(1), 2001, pp. 79-82
95. Keszei, B; Paitz, J; Vandlik, J; Suveges, A
    Control of Nd and Cr concentrations in Nd,Cr : Gd3Ga5O12 single crystals grown by Czochralski method
    JOURNAL OF CRYSTAL GROWTH
    
    B. Keszei et al., "Control of Nd and Cr concentrations in Nd,Cr : Gd3Ga5O12 single crystals grown by Czochralski method", J CRYST GR, 226(1), 2001, pp. 95-100
96. Kim, DH; Yang, HS; Chang, KD; Park, HY; Lee, MB; Lee, JH; Song, YH; Cho, YR; Lee, SY
    Effects of pre-anneal treatment on the optical characteristics of lead tungstate single crystal
    JOURNAL OF CRYSTAL GROWTH
    
    D.H. Kim et al., "Effects of pre-anneal treatment on the optical characteristics of lead tungstate single crystal", J CRYST GR, 226(1), 2001, pp. 117-122
97. Brown, RA; Wang, ZH; Mori, T
    Engineering analysis of microdefect formation during silicon crystal growth
    JOURNAL OF CRYSTAL GROWTH
    
    R.A. Brown et al., "Engineering analysis of microdefect formation during silicon crystal growth", J CRYST GR, 225(2-4), 2001, pp. 97-109
98. Natsume, A; Inoue, N; Tanahashi, K; Mori, A
    Dependence of temperature gradient on growth rate in CZ silicon
    JOURNAL OF CRYSTAL GROWTH
    
    A. Natsume et al., "Dependence of temperature gradient on growth rate in CZ silicon", J CRYST GR, 225(2-4), 2001, pp. 221-224
99. Higgins, WM; Iseler, GW; Bliss, DF; Bryant, G; Tassev, V; Jafri, I; Ware, RM; Carlson, DJ
    Improved phosphorus injection synthesis for bulk InP
    JOURNAL OF CRYSTAL GROWTH
    
    W.M. Higgins et al., "Improved phosphorus injection synthesis for bulk InP", J CRYST GR, 225(2-4), 2001, pp. 225-230
100. Keefer, LA; Matthiesen, DH
     Comparison of inductively coupled plasma-mass spectrometry, neutron activation analysis, and Hall effect techniques using antimony doped germanium
     JOURNAL OF CRYSTAL GROWTH
     
     L.A. Keefer e D.H. Matthiesen, "Comparison of inductively coupled plasma-mass spectrometry, neutron activation analysis, and Hall effect techniques using antimony doped germanium", J CRYST GR, 225(2-4), 2001, pp. 231-235