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La ricerca find articoli where authors phrase all words ' GOLUBOK AO' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 23 riferimenti
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    1. Soshnikov, IP; Gorbenko, OM; Golubok, AO; Ledentsov, NN
      Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs

      SEMICONDUCTORS
    2. Zvonareva, TK; Ivanov-Omskii, VI; Yastrebov, SG; Golubok, AO; Gorbenko, OM; Rozanov, VV
      Investigation of surface morphology of copper-modified amorphous carbon films

      SEMICONDUCTORS
    3. Tsyrlin, GE; Samsonenko, YB; Petrov, VN; Polyakov, NK; Egorov, VA; Masalov, SA; Gorbenko, OM; Golubok, AO; Soshnikov, IP; Ustinov, VM
      Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface

      TECHNICAL PHYSICS LETTERS
    4. Golubok, AO; Gorbenko, OM; Zvonareva, TK; Masalov, SA; Rozanov, VV; Yastrebov, SG; Ivanov-Omskii, VI
      Scanning tunneling microscopy of films of amorphous carbon doped with copper

      SEMICONDUCTORS
    5. Cirlin, GE; Polyakov, NK; Petrov, VN; Samsonenko, YB; Masalov, SA; Golubok, AO; Ledentsov, NN; Bimberg, D; Denisov, DV; Busov, VM; Ustinov, VM; Alferov, ZI
      Effect of growth conditions on the formation of InAs quantum dots on Si(100)

      IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
    6. Cyrlin, GE; Petrov, VN; Dubrovskii, VG; Samsonenko, YB; Polyakov, NK; Golubok, AO; Masalov, SA; Komyak, NI; Ustinov, VM; Egorov, AY; Kovsh, AR; Maximov, MV; Tsatsul'nikov, AF; Volovik, BV; Zhukov, AE; Kop'ev, PS; Ledentsov, NN; Alferov, ZI; Bimberg, D
      Heteroepitaxial growth of InAs on Si: a new type of quantum dot

      SEMICONDUCTORS
    7. Tsyrlin, GE; Petrov, VN; Masalov, SA; Golubok, AO
      Self-organization of quantum dots in multilayer InAs GaAs and InGaAs GaAs structures in submonolayer epitaxy

      SEMICONDUCTORS
    8. Tsirlin, GE; Petrov, VN; Polyakov, NK; Masalov, SA; Golubok, AO; Denisov, DV; Kudryavtsev, YA; Ber, BY; Ustinov, VM
      Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic

      SEMICONDUCTORS
    9. CIRLIN GE; PETROV VN; DUBROVSKII VG; MASALOV SA; GOLUBOK AO; KOMYAK NI; LEDENTSOV NN; ALFEROV ZI; BIMBERG D
      FABRICATION OF INAS QUANTUM DOTS ON SILICON

      Technical physics letters
    10. CIRLIN GE; DUBROVSKII VG; PETROV VN; POLYAKOV NK; KORNEEVA NP; DEMIDOV VN; GOLUBOK AO; MASALOV SA; KUROCHKIN DV; GORBENKO OM; KOMYAK NI; USTINOV VM; EGOROV AY; KOVSH AR; MAXIMOV MV; TSATSULNIKOV AF; VOLOVIK BV; ZHUKOV AE; KOPEV PS; ALFEROV ZI; LEDENTSOV NN; GRUNDMANN M; BIMBERG D
      FORMATION OF INAS QUANTUM DOTS ON A SILICON(100) SURFACE

      Semiconductor science and technology (Print)
    11. CIRLIN GE; PETROV VN; MASALOV SA; GOLUBOK AO; LEDENTSOV NN
      SELF-ORGANIZATION OF QUANTUM DOTS IN MULTILAYER INAS GAAS AND INGAAS/GAAS STRUCTURES BY SUBMONOLAYER MIGRATION-STIMULATED EPITAXY/

      Technical physics letters
    12. TSYRLIN GE; PETROV VN; DUBROVSKII VG; POLYAKOV NK; TIPISEV SY; GOLUBOK AO; LEDENTSOV NN
      FORMATION OF INGAAS GAAS NANOSTRUCTURES BY SUBMONOLAYER DEPOSITION FROM MOLECULAR-BEAMS/

      Semiconductors
    13. CIRLIN GE; PETROV VN; GOLUBOK AO; TIPISSEV SY; DUBROVSKII VG; GURYANOV GM; LEDENTSOV NN; BIMBERG D
      EFFECT OF GROWTH-KINETICS ON THE INAS GAAS QUANTUM-DOT ARRAYS FORMATION ON VICINAL SURFACES/

      Surface science
    14. CIRLIN GE; PETROV VN; DUBROVSKII VG; GOLUBOK AO; TIPISSEV SY; GURYANOV GM; MAXIMOV MV; LEDENTSOV NN; BIMBERG D
      DIRECT FORMATION OF INGAAS GAAS QUANTUM DOTS DURING SUBMONOLAYER EPITAXIES FROM MOLECULAR-BEAMS/

      Czechoslovak journal of Physics
    15. TSYRLIN GE; GOLUBOK AO; TIPISEV SY; LEDENTSOV NN; GURYANOV GM
      INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY (VOL 29, PG 884, 1995)/

      Semiconductors
    16. GURYANOV GM; CIRLIN GE; GOLUBOK AO; TIPISSEV SY; LEDENTSOV NN; SHCHUKIN VA; GRUNDMANN M; BIMBERG D; ALFEROV ZI
      AN INTERMEDIATE (1.0-1.5 MONOLAYERS) STAGE OF HETEROEPITAXIAL GROWTH OF INAS ON GAAS(100) DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY

      Surface science
    17. GURYANOV GM; CIRLIN GE; PETROV VN; POLYAKOV NK; GOLUBOK AO; TIPISSEV SY; GUBANOV VB; SAMSONENKO YB; LEDENTSOV NN; SHCHUKIN VA; GRUNDMANN M; BIMBERG D; ALFEROV ZI
      STM AND RHEED STUDY OF INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER EPITAXIAL TECHNIQUES/

      Surface science
    18. GURYANOV GM; TSYRLIN GE; PETROV VN; SAMSONENKO YB; GUBANOV VB; POLYAKOV NK; GOLUBOK AO; TIPISEV SY; MUSIKHINA EP
      SELF-ORGANIZATION OF STRAINED QUANTUM-SIZE INXGA1-XAS STRUCTURES GROWN ON MISORIENTED (100)SURFACES OF GAAS DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY

      Semiconductors
    19. TSYRLIN GE; GOLUBOK AO; TIPISEV SY; LEDENTSOV NN
      INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY/

      Semiconductors
    20. GURYANOV GM; CIRLIN GE; PETROV VN; POLYAKOV NK; GOLUBOK AO; TIPISSEV SY; MUSIKHINA EP; GUBANOV VB; SAMSONENKO YB; LEDENTSOV NN
      FORMATION OF INGAAS GAAS QUANTUM DOTS BY SUBMONOLAYER MOLECULAR-BEAM EPITAXY/

      Surface science
    21. CIRLIN GE; GURYANOV GM; GOLUBOK AO; TIPISSEV SY; LEDENTSOV NN; KOPEV PS; GRUNDMANN M; BIMBERG D
      ORDERING PHENOMENA IN INAS STRAINED-LAYER MORPHOLOGICAL TRANSFORMATION ON GAAS(100) SURFACE

      Applied physics letters
    22. LEDENTSOV NN; GURYANOV GM; TSYRLIN GE; PETROV VN; SAMSONENKO YB; GOLUBOK AO; TIPISEV SY
      EFFECT OF HEAT-TREATMENT CONDITIONS ON THE SURFACE-MORPHOLOGY OF GALLIUM-ARSENIDE GROWN ON VICINAL GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY

      Semiconductors
    23. GOLUBOK AO; GURYANOV GM; PETROV VN; SAMSONENKO YB; TIPISEV SY; TSYRLIN GE; LEDENTSOV NN
      FORMATION OF ARRAYS OF FACETS ON VICINAL SURFACES OF GAAS (100) DURING MOLECULAR-BEAM EPITAXY

      Semiconductors


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/12/17 alle ore 23:33:00